MRAM
UT8MR2M8 16Mb Parallel MRAM
- Density and organization
- 16 Mb; 2M × 8
- Read/write access time
- 45 ns
- Nominal supply
- 3.3 V
Specifications
| Part Number | UT8MR2M8 |
|---|---|
| Flight Grade | QML-Q, QML-Q+, QML-V |
| LET (MeV·cm²/mg) | ≤112 |
| TID krad(Si) | 1000 |
| Density | 16Mb |
| Configuration | 2M x 8 Parallel |
| Access Time | 45ns |
| Supply Voltage | +3.3V |
| Package | 40-Lead FP 50mil, 40-Lead FP 25mil |
Technical specifications
| Specification | Value | Notes |
|---|---|---|
| Density and organization | 16 Mb; 2M × 8 | |
| Read/write access time | 45 ns | |
| Nominal supply | 3.3 V | |
| Operating range | −40°C to +105°C | |
| Retention | 20 years at −40°C to +105°C | |
| Read/write endurance | Unlimited for 20 years at −40°C to +105°C | |
| Package | 40-lead ceramic flatpack; 25 mil or 50 mil pitch | |
| SMD radiation-assurance levels | 100, 300, 500 or 1000 krad(Si) | Choose the applicable R, F, G or H ordering level; not every supplied device carries the maximum assurance. |
Values are subject to the conditions and ordering options in the referenced product documentation.
Product overview
UT8MR2M8 is a 16 Mb nonvolatile MRAM with an asynchronous interface compatible with traditional SRAM operations. It combines a single 3.3 V supply with 45 ns read/write access and retains stored data when power is removed. Low-voltage write inhibit automatically protects against writes during power loss. The memory is organized as 2,097,152 words by 8 bits. Embedded ECC automatically corrects a single-bit error in data presented to the user during a read cycle. Retention and endurance are specified over the −40°C to +105°C operating range. Ceramic packaging and selectable SMD radiation-assurance levels support programs requiring defined environmental and screening options.
Documentation
Technical documents and resources
For product questions or additional technical information, contact Frontgrade https://www.frontgrade.com/contact-us-form.
Datasheet
Ecosystems
Application Notes
Memory Power Calculator
IBIS Models
More about this product
Product features
- Asynchronous SRAM-compatible operation
- Embedded error correction
- Low-voltage write inhibit protects data during power loss
- CMOS and TTL compatible
Protect data through power loss
Nonvolatile storage retains data without backup power. Low-voltage write inhibit prevents writes when supply voltage is insufficient.
Embedded error correction
The memory is organized as 2,097, 152 words by 8 bits. Embedded ECC automatically corrects a single-bit error in data presented to the user during a read cycle.
Applications
- Boot-code storage for microcontrollers and microprocessors
- Nonvolatile memory for ASICs
Discuss your application
Contact Frontgrade to discuss UT8MR2M8 16Mb Parallel MRAM and the requirements of your application.