UT8MR2M8 16Mb Parallel MRAM
| Part Number | Flight Grade | LET (MeV-cm^2/mg) | TID krad(Si) | Density | Configuration | Access Time | Supply Voltage | Package |
|---|---|---|---|---|---|---|---|---|
| UT8MR2M8 | QML-Q, QML-Q+, QML-V | ≤112 | 1000 | 16Mb | 2M x 8 Parallel | 45ns | +3.3V | 40-Lead FP 50mil40-Lead FP 25mil |
The UT8MR2M8 is high performance, space grade, 16Mb non-volatile Magneto-Resistive Random Access Memory (MRAM) with proven flight heritage.
Based on proven technology from Everspin, the 16Mb MRAM provides a high reliable non-volatile memory with SRAM performance and intrinsic radiation hardened memory that is immune to Single Event Upsets (SEU), low voltage Single Event Latchup (SEL) and Single Event Gate Rupture (SEGR). The UT8MR2M8 provides unlimited endurance and a greater than 20-year retention across the specified temperature range.
Features:
16Mb, 2M x 8-bit
+3.3V Single Supply Voltage
Functionally Compatible with Traditional Asynchronous SRAMs
Automatic Data Protection with Low-Voltage Inhibit Circuitry to Prevent Writes on Power Loss
50 ns Read/Write Access Time
Data Retention 20 years (-40°C to +105°C)
Programming Endurance Unlimited for 20 years (-40°C to +105°C)
Applications:
Boot Code Storage for Microcontrollers and Microprocessors
Non-Volatile RadHard Memory for ASICs
Operational Environment:
Temperature Range: -40°C to +105°C
Total Ionizing Dose: <1000 krad (Si)
SEL Immune: ≤112 MeV-cm2/mg
SEU Immune: Memory Cell 112 MeV-cm2/mg @ 25°C
Physical:
40-pin CFP, 20.52 mm x 24.41 mm, 25 mil
40-pin CFP, 20.52 mm x 31.29 mm, 50 mil
Power:
- ~10mW/MHz (read), Typical
Flight Grade:
- QML-Q, QML-Q+, QML-V