UT8ER512K32 16Mb Asynchronous Monolithic SRAM
| Part Number | SMD Part Number | Flight Grade | LET (MeV-cm^2/mg) | TID krad(Si) | Access Time | Configuration | Density | Supply Voltage | Package |
|---|---|---|---|---|---|---|---|---|---|
| UT8ER512K32 | 5962-06261 | QML-Q, QML-V | ≤111 | 100 | 20ns | 512K x 32 | 16Mb | +3.3V | 68-Lead FP |
The UT8ER512K32 is a 16Mb, 512K x 32, high performance CMOS static RAM with EDAC.
This device has a power-down feature that reduces power consumption by more than 90% when deselected. Ideal for fault tolerant designs in harsh space environments.
Features:
- 16Mb, 512K x 32
- EDAC
- 20ns Read, 10ns Write Maximum Access Time
- Compatible with Industry Standard 512K x 32 SRAMs
- TTL Compatible Inputs and Output Levels
- Three-State Bidirectional Data Bus
- +3.3V I/O Voltage, +1.8V Core Voltage
Applications:
- Ideal for fault tolerant designs in harsh space environments
Operational Environment:
- Temperature Range: -55°C to +125°C
- Total Ionizing Dose: <100 krad (Si)
- SEL Immune: ≤111 MeV-cm2/mg
- SEU Rate: <8.1 x E-16 errors/bit-day
Physical:
- 68-Pin Ceramic Quad Flatpack
Power:
- 5W (maximum package power dissipation)
Flight Grade:
- QML-Q, QML-V