UT8ER2M32 64Mb SRAM Module

Part Number SMD Part Number Flight Grade LET (MeV-cm^2/mg) TID krad(Si) Access Time Configuration Density Supply Voltage Package
UT8ER2M32 5962-10203 QML-Q, QML-V ≤110 100 22ns 2M x 32 64Mb +2.5V 132-Lead FP

Datasheet

Application Notes

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The UT8ER2M32 is a 64Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM) that is functionally compatible with traditional 2Mx32 SRAM devices. Autonomous (master) and demanded (slave) scrubbing continues while deselect

The device has a power-down feature that reduces power consumption by more than 90% when deselected, offered in a single package solution, and has superior SEU performance. Ideal for code execution in high performance microprocessors, microcontrollers and FPGAs.

Features:

  • 64Mb, 2M x 32
  • Asynchronous Interface
  • Embedded EDAC – Master or Slave versions
  • 22ns Read, 10ns Write Access Time
  • Functionally compatible with traditional 2M x 32 SRAM devices 
  • CMOS compatible input and output levels
  • Three-state bidirectional data bus
  • Supply Voltage: +2.3V to +3.6V (Supply), +1.7V to +2.0V (Core)

Applications:

  • Microprocessors, microcontrollers, FPGAs

Operational Environment:

  • Temperature Range: -55°C to +105°C
  • Total Ionizing Dose: <100 krad (Si)
  • SEL Immune: ≤110 MeV-cm2/mg
  • SEU Rate: <8.1 x E-16 errors/bit-day

Physical:

  • 132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack

Power:

  • 2W

Flight Grade:

  • QML-Q, QML-Q+, QML-V

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