UT8CR512K32 16Mb Asychronous SRAM Module
| Part Number | SMD Part Number | Flight Grade | LET (MeV-cm^2/mg) | TID krad(Si) | Access Time | Configuration | Density | Supply Voltage | Package |
|---|---|---|---|---|---|---|---|---|---|
| UT8CR512K32 | 5962-04227 | QML-Q, QML-V | ≤100 | 100 | 17ns | 512K x 32 | 16Mb | +3.3V | 68-Lead FP |
The UT8CR512K32 is a 16Mb, high performance, CMOS static RAM multi-chip module (MCM) available for designs that need more density in a small footprint.
This device has a power-down feature that reduces power consumption by more than 90% when deselected, ideal for fault-tolerant designs.
Features:
- 16Mb, 512Kx32
- 17ns Write maximum Access Time
- Asynchronous Operation
- Compatibility with Industry Standard 512K x 32 SRAMs
- CMOS Compatible Input and Output Levels
- Three-State Bidirectional Data Bus
- +3.3V I/O Voltage, +1.8V Core Voltage
Applications:
- Ideal for fault tolerant designs in harsh space environments
Operational Environment:
- Temperature Range: -55°C to +125°C
- Total Ionizing Dose: <100 krad (Si)
- SEL Immune: ≤100 MeV-cm2/mg
- SEU Rate: <8.9 x E-10 errors/bit-day
Physical:
- 68-Pin Ceramic Quad Flatpack
- 50 Mil Pitch
Power:
- 1.2W
Flight Grade:
- QML-Q, QML-V