UT81NDQ512G8T 4Tb NAND Flash
| Part Number | Flight Grade | LET (MeV-cm^2/mg) | TID krad(Si) | Density | Configuration | Endurance | Supply Voltage | Package | Access Time |
|---|---|---|---|---|---|---|---|---|---|
| UT81NDQ512G8T | PEM INST-001 Level 2 | ≤60 | 50 | 4Tb TLC1.33Tb SLC | 512 x 8 | 40K Program/Erase Cycles (SLC Mode) 3K Program/Erase Cycles (TLC Mode) | +3.3V | 132-PBGA 1mm Pitch | N/A |
Frontgrade offers the highest density and highest performing NAND device in the space industry.
New space programs are demanding high storage density, low power, and high throughput data devices for space programs ranging from image processing and telecommunication to AI and machine learning. Our 4Tb NAND Flash Memory supports the highest density, non-volatile mass storage required for space missions in a small, lightweight footprint.
Based on Triple-Level Cell (TLC) NAND technology, this memory device delivers ultra-high density in a single industry standard JEDEC 132 BGA package and has been qualified to the NASA EEE INST 002 (PEM-INST-001) standard and Open NAND Flash Interface (ONFI) 4.0 compliant. It also supports up to 667MT/s throughput (read/write) per pin.
With access to this flash memory’s unparalleled storage capacity, designers can significantly increase sensor and digital signal processing throughput in space instruments such as solid-state drives and recorders, reconfigurable computing systems, and imaging and communications data buffering applications.
Connect with one of our engineers to learn more.