UT8R4M39 160Mb SRAM Module
| Part Number | SMD Part Number | Flight Grade | LET (MeV-cm^2/mg) | TID krad(Si) | Access Time | Configuration | Density | Supply Voltage | Package |
|---|---|---|---|---|---|---|---|---|---|
| UT8R4M39 | 5962-10207 | QML-Q, QML-Q+ | ≤110 | 100 | 25ns | 4M x 39 | 160Mb | +2.5V | 132-Lead FP |
The UT8R4M39 is a 160Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM) that is functionally compatible with traditional 4Mx39 SRAM devices.
The device has a power-down feature that reduces power consumption by more than 90% when deselected, offered in a single package solution, and has superior SEU performance. Ideal for code execution in high performance microprocessors, microcontrollers and FPGAs.
Features:
- 160Mb, 4M x 39
- Asynchronous Interface
- External EDAC Support
- 20ns Read, 10ns Write Access Time
- Functionally compatible with traditional 1M x 39 SRAM devices
- CMOS compatible input and output levels
- Three-state bidirectional data bus
- Supply Voltage: +2.3V to +3.6V (Supply), +1.7V to +2.0V (Core)
Applications:
- Microprocessors, microcontrollers, FPGAs
Operational Environment:
- Temperature Range:-55°C to +105°C
- Total Ionizing Dose:<100 krad (Si)
- SEL Immune:≤110 MeV-cm2/mg
- SEU Rate:<7.3 x E-7 errors/bit-day
Physical:
- 132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
Power:
- 1.3W
Flight Grade:
- QML-Q, QML-Q+