SRAM
UT8R4M39 160Mb SRAM Module
- SEL characterization
- ≤110 MeV·cm²/mg
- Type
- SRAM
- Part
- UT8R4M39
Specifications
| Part Number | UT8R4M39 |
|---|---|
| Flight Grade | QML-Q, QML-Q+ |
| LET (MeV·cm²/mg) | ≤110 |
| TID krad(Si) | 100 |
| Access Time | 25ns |
| Configuration | 4M x 39 |
| Density | 160Mb |
| Supply Voltage | +2.5V |
| Package | 132-Lead FP |
Technical specifications
| Specification | Value | Notes |
|---|---|---|
| Density and organization | 160 Mb; 4M × 39 | Exact organization determines usable data width; the x39 family is marketed as 40/80/160 Mb. |
| Read/write access | 25 ns read; 10 ns write | Use this density-specific option; the family feature heading does not make all densities 20 ns. |
| I/O and core supplies | I/O: 2.3–3.6 V; core: 1.7–2.0 V | |
| Package | 132-lead side-brazed dual-cavity ceramic quad flatpack | |
| HiRel operating range | −55°C to +105°C | Prototype flow is 25°C only. |
| SMD radiation assurance | 100 krad(Si) | SMD R option. Generic HiRel and prototype flows do not test or guarantee radiation. |
| SEL characterization | ≤110 MeV·cm²/mg |
Values are subject to the conditions and ordering options in the referenced product documentation.
Product overview
The UT8R4M39 is a 160 Mb CMOS static RAM multichip module organized as 4M × 39. It combines eight SRAM die in a 132-lead ceramic quad flatpack and provides 25 ns read access with 10 ns write access. Active-low chip enables, output enable and three-state drivers support memory expansion and bus control. Its 39-bit-wide organization supports systems using external error-detection and correction logic. A deselected power-down mode reduces consumption while preserving stored data. Core and I/O supplies are separate, and the selected SMD ordering configuration defines radiation assurance, temperature range and quality level.
Documentation
Technical documents and resources
For product questions or additional technical information, contact Frontgrade https://www.frontgrade.com/contact-us-form.
Datasheet
Application Notes
Memory Power Calculator
IBIS Models
More about this product
Product features
- Asynchronous SRAM interface
- Separate I/O and core supplies
- Three-state bidirectional data bus
- Deselected power-down mode
- External EDAC support
Memory expansion and bus control
Active-low chip enables, output enable and three-state drivers control individual memory die. Only one die enable may be active at a time.
Applications
- Microprocessor memory
- Microcontroller memory
- FPGA memory
Discuss your application
Contact Frontgrade to discuss UT8R4M39 160Mb SRAM Module and the requirements of your application.