Products
UT8R2M39 80Mb SRAM Module
The UT8R2M39 is an 80Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM) that is functionally compatible with traditional 2Mx39 SRAM devices.
Specifications
Specifications
| Part Number | UT8R2M39 |
|---|---|
| SMD Part Number | 5962-10206 |
| Flight Grade | QML-Q, QML-V |
| LET (MeV-cm^2/mg) | ≤110 |
| TID krad(Si) | 100 |
| Access Time | 22ns |
| Configuration | 2M x 39 |
| Density | 80Mb |
| Supply Voltage | +2.5V |
| Package | 132-Lead FP |
Product overview
The device has a power-down feature that reduces power consumption by more than 90% when deselected, offered in a single package solution, and has superior SEU performance. Ideal for code execution in high performance microprocessors, microcontrollers and FPGAs.
Features:
- 80Mb, 2M x 39
- Asynchronous Interface
- External EDAC Support
- 20ns Read, 10ns Write Access Time
- Functionally compatible with traditional 2M x 39 SRAM devices
- CMOS compatible input and output levels
- Three-state bidirectional data bus
- Supply Voltage: +2.3V to +3.6V (Supply), +1.7V to +2.0V (Core)
Applications:
- Microprocessors, microcontrollers, FPGAs
Operational Environment:
- Temperature Range: -55°C to +105°C
- Total Ionizing Dose: <100 krad (Si)
- SEL Immune: ≤110 MeV-cm2/mg
- SEU Rate: <7.3 x E-7 errors/bit-day
Physical:
- 132-Pin side-brazed Dual Cavity Ceramic Quad Flatpack
Power:
- 2W
Flight Grade:
- QML-Q, QML-Q+, QML-V
Documentation