UT8R128K32 4Mb SRAM

Part Number SMD Part Number Flight Grade LET (MeV-cm^2/mg) TID krad(Si) Access Time Configuration Density Supply Voltage Package
UT8R128K32 5962-03236 QML-Q, QML-V ≤100 100 15ns 128K x 32 4Mb +3.3V 68-Lead FP

The UT8R128K32 is a 4Mb, 128K x 32, high performance CMOS static RAM.

The UT8R128K32 is a 4Mb, 128K x 32, high performance CMOS static RAM

This device has a power-down feature that reduces power consumption by more than 90% when deselected. Ideal for buffer memory for calibration, configuration and lookup table data.

Features:

  • 4Mb, 128K x 32
  • 20ns Read, 10ns Write Maximum Access Time
  • Asynchronous Operation 
  • Compatible with Industry Standard 128K x 32 SRAMs 
  • TTL Compatible Inputs and Output Levels
  • Three-State Bidirectional Data Bus
  • +3.3V I/O Voltage, +1.8V Core Voltage

Applications:

  • Buffer memory for calibration, configuration and lookup table data

Operational Environment:

  • Temperature Range:-55°C to +125°C
  • Total Ionizing Dose:<100 krad (Si)
  • SEL Immune:≤111 MeV-cm2/mg
  • SEU Rate:<8.1 x E-16 errors/bit-day

Physical:

  • 68-Pin Ceramic Quad Flatpack

Power:

  • 5W (maximum package power dissipation)

Flight Grade:

  • QML-Q, QML-V

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