UT8Q512E 4Mb QCOTS SRAM

Part Number	SMD Part Number	Flight Grade	LET (MeV-cm^2/mg)	TID krad(Si)	Access Time	Configuration	Density	Supply Voltage	Package
UT8Q512E	5962-99607	QML-Q, QML-V	≤110	100	20ns	512K x 8	4Mb	+3.3V	36-Lead FP

The UT8Q512E is a 4Mb, +3.3V, radiation tolerant, asynchronous SRAM, which is compatible with industry-standard 512K x 8 SRAMs well suited for fault tolerant designs for low earth, orbits (LEO).

Features:

4Mb, 512K x 8
20ns Maximum Address Access Time
Asynchronous Operation
Compatible with Industry Standard 512K x 8 SRAMs
TTL Compatible Inputs and Output Levels
Three-State Bidirectional Data Bus
Single +3.3V Supply

Applications:

Ideal for fault tolerant designs for low earth orbits

Operational Environment:

Temperature Range: -55°C to +125°C
Total Ionizing Dose: <100 krad (Si)
SEL Immune: ≤110 MeV-cm2/mg
SEU Rate: <1.1 x E-9 errors/bit-day

Physical:

36-Pin Ceramic Flatpack

Power:

1.0W

Flight Grade:

QML-Q, QML-V

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