Products
UT8Q512E 4Mb QCOTS SRAM
The UT8Q512E is a 4Mb, +3.3V, radiation tolerant, asynchronous SRAM, which is compatible with industry-standard 512K x 8 SRAMs well suited for fault tolerant designs for low earth, orbits (LEO).
Specifications
Specifications
| Part Number | UT8Q512E |
|---|---|
| SMD Part Number | 5962-99607 |
| Flight Grade | QML-Q, QML-V |
| LET (MeV-cm^2/mg) | ≤110 |
| TID krad(Si) | 100 |
| Access Time | 20ns |
| Configuration | 512K x 8 |
| Density | 4Mb |
| Supply Voltage | +3.3V |
| Package | 36-Lead FP |
Product overview
Features:
- 4Mb, 512K x 8
- 20ns Maximum Address Access Time
- Asynchronous Operation
- Compatible with Industry Standard 512K x 8 SRAMs
- TTL Compatible Inputs and Output Levels
- Three-State Bidirectional Data Bus
- Single +3.3V Supply
Applications:
- Ideal for fault tolerant designs for low earth orbits
Operational Environment:
- Temperature Range: -55°C to +125°C
- Total Ionizing Dose: <100 krad (Si)
- SEL Immune: ≤110 MeV-cm2/mg
- SEU Rate: <1.1 x E-9 errors/bit-day
Physical:
- 36-Pin Ceramic Flatpack
Power:
- 1.0W
Flight Grade:
- QML-Q, QML-V
Documentation