MRAM
1/2/4/8Gb Parallel MRAM
- Interface
- Parallel asynchronous × 32
- Read/write cycle time
- 45 ns
- Write endurance
- 10¹⁶ cycles
Specifications
| Part Number | UT8MRQxG32B |
|---|---|
| Flight Grade | PEM INST-001 Level 1 |
| LET (MeV·cm²/mg) | Lot Specific; Contact Factory |
| TID krad(Si) | 100 |
| Density | 1/2/4/8 Gb |
| Configuration | 128M x 32 Parallel |
| Access Time | 45ns |
| Supply Voltage | +2.5V to +3.6V |
| Package | 142-PBGA 1mm Pitch |
Technical specifications
| Specification | Value | Notes |
|---|---|---|
| Family densities | 1 Gb, 2 Gb, 4 Gb, 8 Gb | The supplied ordering page identifies 1 Gb, 2 Gb and 8 Gb qualification as in progress; contact Frontgrade for current status. The 4 Gb option is listed separately without that qualifier. |
| Interface | Parallel asynchronous × 32 | |
| Read/write cycle time | 45 ns | |
| Write endurance | 10¹⁶ cycles | |
| Data retention | More than 20 years at 85°C | |
| Supply voltage | VCC: 2.50–3.60 V; VCCIO: 1.8, 2.5, 3.0 or 3.3 V | |
| Package | 142-ball FBGA; 15 × 17 mm | |
| Case-temperature range | −40°C to +125°C | |
| Radiation-assurance options | 50 or 100 krad(Si) | Selected ordering options; no-radiation-assurance option also exists. |
| SEL performance | Lot specific; contact Frontgrade |
Values are subject to the conditions and ordering options in the referenced product documentation.
Product overview
The UT8MRQxG32 family combines nonvolatile STT-MRAM storage with a standard 32-bit parallel asynchronous interface. Density options span 1 Gb to 8 Gb, with 45 ns read/write cycles and true random access for applications that need frequent storage updates without flash-style erase operations. Embedded error correction, low-voltage write inhibit and nonvolatile data retention support boot, code, configuration and image-storage functions. The family is housed in a 142-ball FBGA package. Radiation assurance, screening flow and density must be selected together: the latest datasheet identifies lot-specific SEL performance and notes qualification status by density and screening option.
Documentation
Technical documents and resources
For product questions or additional technical information, contact Frontgrade https://www.frontgrade.com/contact-us-form.
Product Brief
Advanced Datasheet
Models
MRAM Radiation Report
Fill out the form below to download the radiation report.
Ecosystems
More about this product
Product features
- True random access through a 32-bit parallel asynchronous interface
- Embedded multibit error correction
- Low-voltage write inhibit
- No wear leveling required
Persistent random-access storage
MRAM combines nonvolatile retention with random reads and writes. The architecture does not require wear leveling and supports frequent updates to code, configuration and working data.
Choose density and screening together
The ordering table identifies 4 Gb Space PEM L2 and lists qualification in progress for 1 Gb, 2 Gb, 8 Gb and Space PEM L1. Contact Frontgrade for the current status of the desired option.
Applications
- Boot code and operating-system storage
- Scratchpad and execute memory
- Reconfigurable computing image storage
ECAD Models
Discuss your application
Contact Frontgrade to discuss 1/2/4/8Gb Parallel MRAM and the requirements of your application.