Products
1/2/4/8Gb Parallel MRAM
The 1/2/4/8Gb Parallel MRAM is a high reliability space grade, non-volatile Spin Transfer Torque (STT) MRAM.
Specifications
Specifications
| Part Number | UT8MRQxG32B |
|---|---|
| Flight Grade | PEM INST-001 Level 1 |
| LET (MeV-cm^2/mg) | Lot Specific; Contact Factory |
| TID krad(Si) | 100 |
| Density | 1/2/4/8 Gb |
| Configuration | 128M x 32 Parallel |
| Access Time | 45ns |
| Supply Voltage | +2.5V to +3.6V |
| Package | 142-PBGA 1mm Pitch |
Product overview
Screened and qualified to the NASA PEM INST-001 requirements for plastic encapsulated microcircuits. Frontgrade assured comprehensive Single Event Effects characterization.
Features:
- High Density 4Gbit
- High Endurance: Unlimited Read/1016 Writes Cycles
- Premier Retention: (20 years @ 85°C, 10 years at 125°C)
- Standard Parallel Interface (45ns read/write cycle time)
- High Reliability: (multibit embedded error correction)
- Soft Error Immune
- No Wear Leveling Required
- Hardware and Software Data Protection with Low Voltage Write Inhibit
- Provided with Frontgrade’s Radiation Assurance
Applications:
- Boot Code, OS/Code Storage, ScratchPAD, Execute Memory
- Reconfigurable computing image storage
- Ideal for applications needing low power, infinite endurance requiring the ability to store and retrieve data without incurring large latencies.
Documentation
Documentation
Product Brief
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Advanced Datasheet
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Models
MRAM Radiation Report
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