UT8QNF8M8 64Mb QCOTS NOR Flash
| Part Number | SMD Part Number | Flight Grade | LET (MeV-cm^2/mg) | TID krad(Si) | Density | Configuration | Access Time | Supply Voltage | Package |
|---|---|---|---|---|---|---|---|---|---|
| UT8QNF8M8 | 5962-12204 | QML-Q, QML-Q+ | ≤80 | 50 | 64Mb | 8M x 8 | 65ns | +3.3V | 48-lead FP |
The UT8QNF8M8, 64Mb NOR Flash, is a radiation tolerant non-volatile memory to handle the demands of space and terrestrial environments.
The device can be programmed in-system with a standard single +3.3V supply voltage giving system designers the flexibility to utilize a standard PROM programmer. The UT8QNF8M8 has proven flight heritage and offers a parallel interface organized as 8M x 8 bits or 4M x 16 bits. Available in a QML-Q and QML-Q+ flow, the RadTolerant NOR Flash is ideal for storing boot code for microprocessors and microcontrollers.
Features:
64Mbits, 8M x 8-bits or 4M x16-bits
Single +3.3V power supply
Fast 60ns Read/Write Access Time
Functionally Compatible with Traditional Single Power Supply Flash Devices
Parallel Interface
CFI Protocol Implementation
Programming Endurance 10 K Cycles per Sector
Simultaneous Read/Write Operations
Flexible Bank Architecture
Data Retention > 20 years @ +90°C
Applications:
Boot Code Storage for Microcontrollers and Microprocessors
FPGA Configuration Storage
Operational Environment:
Temperature Range: -40°C to +105°C
Total Ionizing Dose: <10 or 50krad (Si)
SEL Immune: ≤80 MeV-cm2/mg
SEU Immune: Memory Cell 102 MeV-cm2/mg @ 25°C
Physical:
48-pin Ceramic Flat Pack
16.15 mm x 9.78 mm, 25 mil
Power:
100 mW (typical)
Flight Grade:
QML-Q, QML-Q+