UT81NDQ512G8T 4Tb NAND Flash

Part Number Flight Grade LET (MeV-cm^2/mg) TID krad(Si) Density Configuration Endurance Supply Voltage Package Access Time
UT81NDQ512G8T PEM INST-001 Level 2 ≤60 50 4Tb TLC1.33Tb SLC 512 x 8 40K Program/Erase Cycles (SLC Mode) 3K Program/Erase Cycles (TLC Mode) +3.3V 132-PBGA 1mm Pitch N/A
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Product Brief

Application Notes

UT81NDQ512G8T Datasheet

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Ecosystems

Frontgrade offers the highest density and highest performing NAND device in the space industry.

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New space programs are demanding high storage density, low power, and high throughput data devices for space programs ranging from image processing and telecommunication to AI and machine learning. Our 4Tb NAND Flash Memory supports the highest density, non-volatile mass storage required for space missions in a small, lightweight footprint.

Based on Triple-Level Cell (TLC) NAND technology, this memory device delivers ultra-high density in a single industry standard JEDEC 132 BGA package and has been qualified to the NASA EEE INST 002 (PEM-INST-001) standard and Open NAND Flash Interface (ONFI) 4.0 compliant. It also supports up to 667MT/s throughput (read/write) per pin.

With access to this flash memory’s unparalleled storage capacity, designers can significantly increase sensor and digital signal processing throughput in space instruments such as solid-state drives and recorders, reconfigurable computing systems, and imaging and communications data buffering applications.

Features:

  • 4Tb Density
  • 3.3 V Core and 1.8 V, 1.2V I/O Supply Voltage
  • Open NAND Flash Interface (ONFI) 4.0 Compliant
  • Triple-Level Cell (TLC) Technology
  • Organization
    • Page Size:      x8 18,592 Bytes
    • Block Size:    2304 Pages
    • Plane Size:    4 planes x 504 blocks
    • Device Size:  16,128 Blocks
  • Synchronous I/O Performance
    • NV-DDR2 Support (533MT/s  r/w throughput per pin)
    • NV-DDR3 Support (667MT/s  r/w throughput per pin)
  • Asynchronous I/O Performance
    • tRC/tWC:  20 ns (min)
  • Array Performance
    • Read Page:  74 uS (typical)
    • Program Page:  1900 uS (typical)
    • Erase Block:  15 ms (typical)
  • Data Retention:  JESD47G Compliant
  • Endurance:  
    • 3 K Program/Erase Cycles (TLC mode)
    • 40 K Program/Erase Cycles (SLC mode)

Applications:

  • Solid-State Drives
  • Solid-State Recorders
  • Reconfigurable Computing
  • Imaging and Communications Data Buffering
  • Space Computing

Operational Environment:

  • Temperature Range: -40°C to +85°C
  • Total Ionizing Dose: <50 krad (Si)
  • SEL Immune: ≤55 MeV-cm2/mg

Physical:

  • 132-Pin Plastic Ball Grid Array, JEDEC
  • 12 mm x 18 mm, 1.0 mm pitch

Power:

  • <300mW (typical per active die)

Flight Grade:

  • PEM-INST-001 (NASA-EEE-INST-002) – Level 2


 

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