Raw NAND Flash
UT81NDQ512G8T 4Tb NAND Flash
- Interface
- ONFI 4.0
- Core supply
- 2.7–3.6 V
- Temperature range
- −40°C to +85°C
Specifications
| Part Number | UT81NDQ512G8T |
|---|---|
| Flight Grade | PEM INST-001 Level 1 |
| LET (MeV-cm^2/mg) | ≤60 |
| TID krad(Si) | 50 |
| Density | 4Tb TLC1.33Tb SLC |
| Configuration | 512 x 8 |
| Endurance | 40K Program/Erase Cycles (SLC Mode) 3K Program/Erase Cycles (TLC Mode) |
| Supply Voltage | +3.3V |
| Package | 132-PBGA 1mm Pitch |
| Access Time | N/A |
Technical specifications
| Specification | Value | Notes |
|---|---|---|
| Density | 4 Tb TLC | Capacity is stated for TLC mode. |
| Interface | ONFI 4.0 | |
| NV-DDR3 throughput | 667 MT/s per pin | Requires 1.2 V VCCQ; the source identifies full-temperature testing in timing mode 9. |
| NV-DDR2 interface capability | 533 MT/s per pin | Up to mode 8 / 533 MT/s per pin is listed as interface capability. NV-DDR2 requires 1.8 V VCCQ, and the source identifies full-temperature testing in mode 6; do not treat 533 MT/s as the tested rate across the full temperature range. |
| Core supply | 2.7–3.6 V | |
| Program/erase endurance | TLC: 3,000 cycles; SLC: 40,000 cycles | READ RETRY and AUTO READ CALIBRATION are required to achieve specified endurance; see data-integrity requirements. |
| Temperature range | −40°C to +85°C | |
| Package | 132-ball PBGA; 1 mm pitch; 63Sn37Pb balls | |
| Radiation-assurance options | 10 or 30 krad(Si); 50 krad(Si) contact factory | Effective dose rate 0.1rad(Si)/s. Applies only to radiation-assured Space PEM QD/Level 2 options; do not use VPP in a radiation environment. |
Values are subject to the conditions and ordering options in the referenced product documentation.
Product overview
The UT81NDQ512G8T integrates 4 Tb of TLC NAND flash in a 132-ball BGA for solid-state drives, recorders and data-intensive space systems. The device follows ONFI 4.0 and supports asynchronous, NV-DDR2 and NV-DDR3 interfaces with voltage-dependent operating modes. It provides high-density storage for reconfigurable computing and imaging or communications data buffering. The external host supplies data randomization and the required error management. Read-retry and automatic read-calibration operations are part of achieving the specified endurance. Radiation-assured configurations are available by ordering option, with operating conditions and VPP restrictions that must be considered in the storage architecture.
Documentation
Technical documents and resources
For product questions or additional technical information, contact Frontgrade https://www.frontgrade.com/contact-us-form.
Product Brief
Application Notes
UT81NDQ512G8T Datasheet
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Ecosystems
More about this product
Product features
- ONFI 4.0 and JESD230C compliant
- Asynchronous, NV-DDR2 and NV-DDR3 interfaces
- TLC and SLC operating modes with mode-specific endurance
- Standard 132-ball BGA
Host-managed NAND
The host must randomize input data and implement the required ECC and error management. This is raw NAND storage rather than an eMMC device with integrated NAND management.
Plan for radiation operation
Radiation testing is performed without VPP. The datasheet prohibits VPP operation in a radiation environment and requires consultation on bit-error performance and available assurance levels.
Applications
- Solid-state drives
- Solid-state recorders
- Reconfigurable computing
- Imaging and communications data buffering
- Space computing
ECAD Models
Discuss your application
Contact Frontgrade to discuss UT81NDQ512G8T 4Tb NAND Flash and the requirements of your application.