UT28F256LVQLE 3V 256K PROM

Part Number SMD Part Number Flight Grade LET (MeV-cm^2/mg) TID krad(Si) Density Configuration Access Time Supply Voltage Package
UT28F256LVQLE 5962-01517 QML-Q, QML-V ≤110 1000 256K 32K x 8 65ns +3.3V 28-lead FP

Datasheet

Application Notes

ADEPT Notifications

Memory Power Calculator

IBIS Model

The UT28F256LVQLE, 32K x 8 PROM, is a high performance, asynchronous, radiation-hardened memory device.

The PROM features fully asynchronous operation requiring no external clocks or timing strobes.  An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256LVQLE.  The combination of radiation hardness, fast access time, and low power consumption make the PROM ideal for high-speed systems designed for operation in harsh environments.

Features:

  • 256Kb, 32K x 8-bit 

  • +3.3V Single Supply Voltage

  • Supported by industry standard programmer

  • 65ns maximum address access time (-55°C to +125°C)

  • TTL compatible input and TTL/CMOS compatible output levels

  • Three-state data bus

  • Low operating and standby current

    • Operating 50mA maximum @ 15.4MHz

      • Derating 1.7mA/MHz

    • Standby 1.0mA maximum (post-rad)

  • No post program conditioning

Applications:

  • Boot Code Storage for Microcontrollers and Microprocessors

Operational Environment:

  • Temperature Range: -55°C to +125°C

  • Total Ionizing Dose: <1000 krad (Si)

  • SEL Immune: ≤110 MeV-cm2/mg

Physical:

  • 28-Lead Ceramic Flatpack
    50 mil pitch

Power:

  • 40mW (typical during 100% read cycling)

Flight Grade:

  • QML-Q, QML-V

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