UT8Q512K32E 16Mb QCOTS SRAM

Part Number SMD Part Number Flight Grade LET (MeV-cm^2/mg) TID krad(Si) Access Time Configuration Density Supply Voltage Package
UT8Q512K32E 5962-01533 QML-Q, QML-V ≤100 100 25ns 512K x 32 16Mb +3.3V 68-Lead FP

Datasheet

App Note

The UT8Q512K32E is a 16Mb, +3.3V, radiation tolerant, multi-chip module (MCM) for designs that require higher density in a small footprint.

This device has a power-down feature that reduces power consumption by more than 90% when deselected and well suited for fault tolerant designs for low earth orbits.

Features:

  • 16Mb, 512K x 32
  • 25ns Maximum Address Access Time 
  • Asynchronous Operation 
  • Compatible with Industry Standard 512K x 32 SRAMs 
  • TTL Compatible Inputs and Output Levels
  • Three-State Bidirectional Data Bus
  • Single +3.3V Supply

Applications:

  • Ideal for fault tolerant designs for low earth orbits

Operational Environment:

  • Temperature Range: -40°C to +105°C
  • Total Ionizing Dose: <100 krad (Si)
  • SEL Immune: ≤110 MeV-cm2/mg
  • SEU Rate: <1.1 x E-9 errors/bit-day

Physical:

  • 68-Pin Ceramic Quad Flatpack 
  • 50 Mil Pitch

Power:

  • 1.0W per byte

Flight Grade:

  • QML-Q, QML-V

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