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UT8ER4M32 128Mb SRAM Module

The UT8ER4M32 is a 128Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM) that is functionally compatible with traditional 4Mx32 SRAM devices.
Specifications

Specifications

Product specifications
Part Number UT8ER4M32
SMD Part Number 5962-10204
Flight Grade QML-Q, QML-Q+
LET (MeV-cm^2/mg) ≤110
TID krad(Si) 100
Access Time 25ns
Configuration 4M x 32
Density 128Mb
Supply Voltage +2.5V
Package 132-Lead FP

Product overview

The device has a power-down feature that reduces power consumption by more than 90% when deselected, offered in a single package solution, and has superior SEU performance. Ideal for code execution in high performance microprocessors, microcontrollers and FPGAs.

Features:

  • 128Mb, 4M x 32
  • Asynchronous Interface
  • Embedded EDAC – Master or Slave versions
  • 25ns Read, 10ns Write Access Time
  • Functionally compatible with traditional 4M x 32 SRAM devices 
  • CMOS compatible input and output levels
  • Three-state bidirectional data bus
  • Supply Voltage: +2.3V to +3.6V (Supply), +1.7V to +2.0V (Core)

Applications:

  • Microprocessors, microcontrollers, FPGAs

Operational Environment:

  • Temperature Range: -55°C to +105°C
  • Total Ionizing Dose: <100 krad (Si)
  • SEL Immune: ≤110 MeV-cm2/mg
  • SEU Rate: <8.1 x E-16 errors/bit-day

Physical:

  • 132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack

Power:

  • 1.3W

Flight Grade:

  • QML-Q, QML-Q+

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