UT8ER4M32 128Mb SRAM Module

Part Number SMD Part Number Flight Grade LET (MeV-cm^2/mg) TID krad(Si) Access Time Configuration Density Supply Voltage Package
UT8ER4M32 5962-10204 QML-Q, QML-Q+ ≤110 100 25ns 4M x 32 128Mb +2.5V 132-Lead FP

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Application Notes

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The UT8ER4M32 is a 128Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM) that is functionally compatible with traditional 4Mx32 SRAM devices.

The device has a power-down feature that reduces power consumption by more than 90% when deselected, offered in a single package solution, and has superior SEU performance. Ideal for code execution in high performance microprocessors, microcontrollers and FPGAs.

Features:

  • 128Mb, 4M x 32
  • Asynchronous Interface
  • Embedded EDAC – Master or Slave versions
  • 25ns Read, 10ns Write Access Time
  • Functionally compatible with traditional 4M x 32 SRAM devices 
  • CMOS compatible input and output levels
  • Three-state bidirectional data bus
  • Supply Voltage: +2.3V to +3.6V (Supply), +1.7V to +2.0V (Core)

Applications:

  • Microprocessors, microcontrollers, FPGAs

Operational Environment:

  • Temperature Range: -55°C to +105°C
  • Total Ionizing Dose: <100 krad (Si)
  • SEL Immune: ≤110 MeV-cm2/mg
  • SEU Rate: <8.1 x E-16 errors/bit-day

Physical:

  • 132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack

Power:

  • 1.3W

Flight Grade:

  • QML-Q, QML-Q+

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