UT8SD4MQ2G72 18GB DDR4
The UT8SD4MQ2G72 is an ultra-high-density, space-grade 18GB (16GB + 2GB ECC) DDR4 DRAM volatile memory.
Specifications
Specifications
| Part Number | UT8SD4MQ2G72 |
|---|---|
| Flight Grade | PEM INST-001 Level 2 |
| TID krad(Si) | 50 |
| Event Rate | 40,000 yrs MTTF GEO (Adams 90%, 100 mil Al) |
| Density | 16GB + 2GB ECC |
| Configuration | 2G x 72 |
| Speed | 2400 MT/s @CL 18-18-18 |
| Supply Voltage | 1.2V |
| Package | 266-PBGA 1mm Pitch |
Product overview
Screened and qualified to the NASA PEM INST-001 requirements for plastic encapsulated microcircuits.
Features:
- PC4-19200 UDIMM equivalent
- 18 GB Density (16GB + 2GB ECC)
- 2Gx72 configuration (9 die)
- Dedicated RESET each die
- Supports die SEFI recovery & maintain module availability
- Command/Address (CA) parity
- Data bus inversion supported
- Up to 2400 MT/s data rate
- Maximum Power Savings Mode supported
- Low power auto self refresh
- Thermally enhanced packaging technology
- 1.2V VDD & VDDQ
- 2.5V VPP
Applications:
- High-performance computing
- Processing data storage for AI & ML
- RF signal processing data storage
- Buffering data for SSDs
- Operational Environment: Temp Range: -55°C to +125°C
- TID: 50 krad(Si) (See report for full details)
- SEL: 40,000 yrs MTTF GEO; >1,500,00 yrs MTTF LEO
- Part Characterized from 37 to 82 LET
- SEU: 8.93E-12 errors/bit-day (LEO)
- SEFI: High current: 1.04E-4 events/device-day (LEO)
- Dynamic: 5.87E-4 events/device-day (LEO)
Physical:
- 266-pin (14x19) PBGA, 15 mm x 20 mm x 2.3 mm, 1.5gm
- 1.0 mm pitch
Power:
- 200mW burst READ/WRITE power per die
- ThetaJ-C = 3.44 C/W
Flight Levels:
- NASA EEE-INST-002 (PEM-INST-001) Level 2
- Frontgrade Space PEM QD
Documentation
Documentation
Product Brief
Datasheet
DDR4 Radiation Report
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