SDRAM
UT8SDMQ64M48 3.0GB SDRAM
Specifications
| Part Number | UT8SDMQ64M48 |
|---|---|
| Flight Grade | Space |
| LET (MeV-cm^2/mg) | ≤111 |
| TID krad(Si) | 50 |
| Access Time | 7.5ns |
| Configuration | 64Mx48 |
| Density | 3.0GB |
| Supply Voltage | +3.3V |
| Package | 128-Lead FP |
Product overview
The device is 3.0Gb in density and organized as 64Mx48 (16M x 48 x 4 banks). Read and write accesses to the DRAM are burst oriented; an auto-refresh mode is provided, along with a power-saving, power-down mode. Ideal for fault tolerant systems.
Features:
3.0Gb, 64Mx48 (16Meg x 48 x 4 banks)
100MHz Maximum Frequency
LVTTL Compatible with Multiplexed Address
Fully Synchronous
Internal Pipelined Operation
Programmable Burst Lengths of 1, 2, 4, 8, or Full Page
Auto-Precharge includes Concurrent Auto Precharge and Autorefresh Mode
32ms, 8,192-cycle refresh
Single +3.3V Power Supply
Applications:
Ideal for fault tolerant designs in harsh space environments
Operational Environment
Temperature Range: -40°C to +105°C
Total Ionizing Dose: 50 krad (Si)
SEL Immune: ≤111 MeV-cm2/mg
SEU Event Rate: 1.3E-10 events/bit-day
Physical:
128-Pin Ceramic Quad Flatpack
Typical Power:
2.0W (max)
Flight Grade:
QML-Q, QML-Q+ Frontgrade Manufacturing Flow