Products

High Power, Rack Mounted, GaN RF Amplifier

SSPA 0.020-6.000-35
Specifications

Specifications

Product specifications
Part Number SSPA 0.020-6.000-35-RM
Environment Ground/Air
Min/Max Frequency 0.020 - 6.0 GHz
Power Out (W) typical 35
VDC Input 28 Vdc
Size in Inches (W x L x H) 19 x 22 x 7
Gain (dB) Typical 50

Product overview

Gallium Nitride Rugged Rackmount Power Amplifier operates across 20 to 6000 MHz with 35 watts Typical output power. 28Vdc operation allows for 25 uSec Turn On/Off Gating Times.

Aethercomm Model Number SSPA 0.020-6.000-35-RM is a high power, rackmounted, RF amplifier that operates from 20 MHz to 6000 MHz minimum and is packaged in a rugged and rackmounted enclosure. This rackmounted GaN high-power RF amplifier is in a 4u height, 19” rack. Typical output power is greater than 35 watts up to 4.0 GHz at P3dB. Greater than 4 GHz up to 6 GHz, the power falls off to approximately 20 watts. Nominal input power levels are -7.0 to +6.0 dBm. Input VSWR is 2.0:1 maximum.

Standard features include output short and open circuit protection and over/under voltage protection. This RF transmit amplifier operates from a +28 Vdc. This GaN high-power RF amplifier operates in a laboratory environment. This rackmounted power amp is designed to with stand much harsher environments.Please contact an expert by clicking below.

Temperature control is done with two fans that provide an active thermal management system. An SMA female connector is standard on the RF input connector. The output RF connector is Type N female. The DC input voltage is supplied on the back face of the rackmount amplifier unit. Typical test data appears on page two of this data sheet at room temperature. For further test data or operation and logic and pin out requirements, please contact an expert by clicking below.

• Gallium Nitride Technology
• Operation across 20 to 6000 MHz Minimum
• Rugged Rackmount
• 35 watts Typical Output Power
• 28Vdc Operation
• 25 uSec Turn On/Off Gating Times

 

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