Products
High Powered, Broadband, GaN SSPA
Specifications
| Part Number | SSPA 6.0-18.0-30 |
|---|---|
| Environment | Ground/Air |
| Min/Max Frequency | 6.0 - 18.0 GHz |
| Power Out (W) typical | 30 |
| VDC Input | 28 Vdc |
| Operating Temp (Degrees C) | -40 to +70 |
| Size (W x L x H) | 5.5 x 3.25 x 1.5 |
| Enable/Disable (uSec) Typical | 20 |
Product overview
Model number SSPA 6.0-18.0-30 is a super broadband, Gallium Nitride (GaN) RF power amplifier that delivers 30 watts of RF power from 6000 MHz to 18000 MHz.
This GaN broadband RF power amplifier offers high power over a multi-decade bandwidth with excellent power added efficiency. This super broadband RF power amplifier operates at a base plate temperature between -40C to +70C. It is packaged in a modular housing that is 3.5″”(w) by 5.5″”(l) by 1.1″”(h).
The CW RF output power is ˜ 30 watts typical into a 1:1 VSWR, at room temperature across the band. Gain Flatness is ±4 dB typical. The GaN broadband RF power amplifier Enable signal is a 5V TTL logic level discrete signal. The spurious emissions of the 30-watt power amplifier with the specified DC voltage is less than -60 dBc. The GaN SSPA has a SMA female RF input/output. This GaN broadband high power RF amplifier has a combo-D style connector for power and control signals.
• 30 W Typical Output Power
• 6 GHz to 18 GHz Operation
• 50 dB Small Signal Gain
• 28 Vdc Input Voltage
• Gallium Nitride Technology
• Reverse Polarity Protection